fast recovery diodes rf601b2d ? applications ? dimensions (unit : mm) ? land size figure (unit : mm) general rectification ? features 1)power mold type.(cpd) 2)ultra low v f 3)very fast recovery 4)low switching loss ? structure ? construction silicon epitaxial planer ? structure ? taping dimensions (unit : mm) ? absolute maximum ratings (ta=25? c) symbol unit v rm v v r v io a i fsm a tj ? c tstg ? c ? electrical characteristic (ta=25c) symbol min. typ. max. unit forward voltage v f - 0.87 0.93 v i f =3a reverse current i r - 0.01 10 ? a v r =200v reverse recovery time trr - 14 25 ns i f =0.5a,i r =1a,irr=0.25*i r thermal impedance ? jc --6 ? c/w junction to case storage temperature ? 55 to ? 150 (*1) business frequencies, rating of r-load, tc=128 ? c, 1/2 io per diode conditions parameter forward current surge peak (60hz/1cyc) 40 junction temperature 150 parameter limits reverse voltage (repetitive peak) 200 reverse voltage (dc) 200 average rectified forward current (*1) 6 cpd 1. 6 2.3 1.6 2.3 3.0 2.0 6.0 6.0 (1) (3) (2) 1/3 2011.05 - rev.f data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
rb601b2d ? electrical characteristic curves 0.001 0.01 0.1 1 10 0 100 200 300 400 500 600 700 800 900 1000 ta=150 ? c ta=125 ? c ta=75 ? c ta=25 ? c ta=-25 ? c 0 5 10 15 20 25 30 ave:13.7ns ta=25c i f =0.5a i r =1a irr=0.25*i r n=10pcs 0 10 20 30 40 50 60 70 80 90 100 1 10 100 1000 11 01 0 0 8.3m ifsm 1cyc 8.3m 840 850 860 870 880 890 0.1 1 10 100 1000 10000 0 50 100 150 200 ta=150 ? c ta=125 ? c ta=75 ? c ta=25c ta=-25 ? c z 50 60 70 80 90 100 110 120 130 140 150 ave:99.4pf ta=25c f=1mhz v r =0v n=10pcs 0 50 100 150 200 250 300 ave:126.0a 8.3m ifsm 1cyc forward voltage : v f (mv) v f -i f characteristics forward current : i f (a) reverse current:i r (na) reverse voltage : v r (v) v r -i r characteristics capacitance between terminals:ct(pf) reverse voltage:v r (v) v r -ct characteristics v f dispersion map forward voltage:v f (mv) reverse current:i r (na) i r dispersion map capacitance between terminals:ct(pf) ct dispersion map 1 10 100 0 102030 f=1mhz ave:4.60na ave:859.4mv ta=25c v r =0pcs n=30pcs ta=25 ? c i f =3a n=30pcs i fsm dispersion map peak surge forward current:i fsm (a) peak surge forward current:i fsm (a) number of cycles i fsm -cycle characteristics trr dispersion map reverse recovery time:trr(ns) 2/3 2011.05 - rev.f www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
rb601b2d 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000 rth(j-a) rth(j-c) 1ms im=100ma i f =3a 300us tim mounted on a epoxy board 0 2 4 6 8 10 0246810 sin( ? =180) d=1/2 dc ambient temperature:ta( ? c) detating curve ? (io-ta) average rectified forward current:io(a) average rectified forward current:io(a) case temparature:tc( ? c) detating curve ? (io-tc) 0 5 10 15 0 25 50 75 100 125 150 dc d=1/2 sin( ?? 180) 0 5 10 15 0 25 50 75 100 125 150 d=1/2 sin( ?? 180) dc t d=t/t t vr io vr=100v 0a 0v t tj=150 ? c d=t/t t v r io v r =100v 0a 0v 0 5 10 15 20 25 30 no break at 30kv c=100pf r=1.5k ? c=200pf r=0 ? no break at 30kv electrostatic discharge test esd(kv) esd dispersion map t tj=150 ? c d=t/t t v r io v r =100v 0a 0v 10 100 1000 110100 t ifsm peak surge forward current:i fsm (a) time:t(ms) i fsm -t characteristics time:t(s) rth-t characteristics transient thaermal impedance:rth ( /w) forward power dissipation:pf(w) average rectified forward current io(a) io-pf characteristics 3/3 2011.05 - rev.f www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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